Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers

S. N. Hosseinimotlagh; H. Ghavidelfard; M. Pezeshkian; H. Molaei

doi:doi:10.11648/j.ajea.20140202.12

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Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers

S. N. Hosseinimotlagh, H. Ghavidelfard, M. Pezeshkian, H. Molaei

Published in American Journal of Electromagnetics and Applications (Volume 2, Issue 2)

Received: 5 March 2014 Accepted: 22 April 2014 Published: 30 May 2014

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Abstract

One of the mechanisms for threshold current density reduction is using spin polarized carriers generated by electrical spin injection. Electrical spin injection is spin-polarized carrier injection by using a magnetic contact. In this paper, we have solved numerically rate equations governing on semiconductor spin un-polarized and polarized laser with - based quantum well active region in which Schottky tunnel barrier treat as the spin injector. For the first time, we demonstrate simultaneously effect of normalized spin relaxation rate and injected current polarization on threshold current density reduction related to two form of spontaneous recombination. According to our result threshold current density reduction increases by simultaneously normalized spin relaxation rate reduction and increasing of injected current polarization. Maximum obtained threshold current density reduction values for linear and quadratic spontaneous recombination is 0.07 and 0.31. Moreover, we compute and compare the effect of value of injected electron current polarization on normalized spin-filtering interval for two types of recombination. Maximum obtained normalized spin-filtering interval values for linear and quadratic spontaneous recombination is 1.2 and 1.36. Finally we calculate spin-up optical gain and from this we obtained the conditions for achieving optimum optical gain. Maximum obtained spin-up optical gain valueis17.36.

Published in	American Journal of Electromagnetics and Applications (Volume 2, Issue 2)
DOI	10.11648/j.ajea.20140202.12
Page(s)	16-22
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Spin Laser, Gain, Threshold Current, Quantum Well, Filtering

References

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APA Style

S. N. Hosseinimotlagh, H. Ghavidelfard, M. Pezeshkian, H. Molaei. (2014). Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers. American Journal of Electromagnetics and Applications, 2(2), 16-22. https://doi.org/10.11648/j.ajea.20140202.12

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ACS Style

S. N. Hosseinimotlagh; H. Ghavidelfard; M. Pezeshkian; H. Molaei. Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers. Am. J. Electromagn. Appl. 2014, 2(2), 16-22. doi: 10.11648/j.ajea.20140202.12

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AMA Style

S. N. Hosseinimotlagh, H. Ghavidelfard, M. Pezeshkian, H. Molaei. Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers. Am J Electromagn Appl. 2014;2(2):16-22. doi: 10.11648/j.ajea.20140202.12

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@article{10.11648/j.ajea.20140202.12,
  author = {S. N. Hosseinimotlagh and H. Ghavidelfard and M. Pezeshkian and H. Molaei},
  title = {Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers},
  journal = {American Journal of Electromagnetics and Applications},
  volume = {2},
  number = {2},
  pages = {16-22},
  doi = {10.11648/j.ajea.20140202.12},
  url = {https://doi.org/10.11648/j.ajea.20140202.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajea.20140202.12},
  abstract = {One of the mechanisms for threshold current density reduction is using spin polarized carriers generated by electrical spin injection. Electrical spin injection is spin-polarized carrier injection by using a magnetic contact. In this paper, we have solved numerically rate equations governing on semiconductor spin un-polarized and polarized laser with  - based quantum well active region in which Schottky tunnel barrier treat as the spin injector. For the first time, we demonstrate simultaneously effect of normalized spin relaxation rate and injected current polarization on threshold current density reduction related to two form of spontaneous recombination. According to our result threshold current density reduction increases by simultaneously normalized spin relaxation rate reduction and increasing of injected current polarization. Maximum obtained threshold current density reduction values for linear and quadratic spontaneous recombination is 0.07 and 0.31. Moreover, we compute and compare the effect of value of injected electron current polarization on normalized spin-filtering interval for two types of recombination. Maximum obtained normalized spin-filtering interval values for linear and quadratic spontaneous recombination is 1.2 and 1.36. Finally we calculate spin-up optical gain and from this we obtained the conditions for achieving optimum optical gain. Maximum obtained spin-up optical gain valueis17.36.},
 year = {2014}
}

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TY - JOUR
T1 - Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers
AU - S. N. Hosseinimotlagh
AU - H. Ghavidelfard
AU - M. Pezeshkian
AU - H. Molaei
Y1 - 2014/05/30
PY - 2014
N1 - https://doi.org/10.11648/j.ajea.20140202.12
DO - 10.11648/j.ajea.20140202.12
T2 - American Journal of Electromagnetics and Applications
JF - American Journal of Electromagnetics and Applications
JO - American Journal of Electromagnetics and Applications
SP - 16
EP - 22
PB - Science Publishing Group
SN - 2376-5984
UR - https://doi.org/10.11648/j.ajea.20140202.12
AB - One of the mechanisms for threshold current density reduction is using spin polarized carriers generated by electrical spin injection. Electrical spin injection is spin-polarized carrier injection by using a magnetic contact. In this paper, we have solved numerically rate equations governing on semiconductor spin un-polarized and polarized laser with - based quantum well active region in which Schottky tunnel barrier treat as the spin injector. For the first time, we demonstrate simultaneously effect of normalized spin relaxation rate and injected current polarization on threshold current density reduction related to two form of spontaneous recombination. According to our result threshold current density reduction increases by simultaneously normalized spin relaxation rate reduction and increasing of injected current polarization. Maximum obtained threshold current density reduction values for linear and quadratic spontaneous recombination is 0.07 and 0.31. Moreover, we compute and compare the effect of value of injected electron current polarization on normalized spin-filtering interval for two types of recombination. Maximum obtained normalized spin-filtering interval values for linear and quadratic spontaneous recombination is 1.2 and 1.36. Finally we calculate spin-up optical gain and from this we obtained the conditions for achieving optimum optical gain. Maximum obtained spin-up optical gain valueis17.36.
VL - 2
IS - 2
ER -

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Author Information

S. N. Hosseinimotlagh

Department of Physics, Shiraz branch Islamic Azad University, Shiraz, Iran
H. Ghavidelfard

Department of Physics, Payam Noor University, Bandar Abbas, Iran
M. Pezeshkian

Department of Physics, Payam Noor University, Shiraz, Iran
H. Molaei

Department of Physics, Payam Noor University, Shiraz, Iran

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APA Style

S. N. Hosseinimotlagh, H. Ghavidelfard, M. Pezeshkian, H. Molaei. (2014). Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers. American Journal of Electromagnetics and Applications, 2(2), 16-22. https://doi.org/10.11648/j.ajea.20140202.12

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ACS Style

S. N. Hosseinimotlagh; H. Ghavidelfard; M. Pezeshkian; H. Molaei. Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers. Am. J. Electromagn. Appl. 2014, 2(2), 16-22. doi: 10.11648/j.ajea.20140202.12

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AMA Style

S. N. Hosseinimotlagh, H. Ghavidelfard, M. Pezeshkian, H. Molaei. Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers. Am J Electromagn Appl. 2014;2(2):16-22. doi: 10.11648/j.ajea.20140202.12

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@article{10.11648/j.ajea.20140202.12,
  author = {S. N. Hosseinimotlagh and H. Ghavidelfard and M. Pezeshkian and H. Molaei},
  title = {Scrutiny of Injected Electron Current Polarization Effect on the Threshold Current Density Reduction in QW Spin-Lasers},
  journal = {American Journal of Electromagnetics and Applications},
  volume = {2},
  number = {2},
  pages = {16-22},
  doi = {10.11648/j.ajea.20140202.12},
  url = {https://doi.org/10.11648/j.ajea.20140202.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajea.20140202.12},
  abstract = {One of the mechanisms for threshold current density reduction is using spin polarized carriers generated by electrical spin injection. Electrical spin injection is spin-polarized carrier injection by using a magnetic contact. In this paper, we have solved numerically rate equations governing on semiconductor spin un-polarized and polarized laser with  - based quantum well active region in which Schottky tunnel barrier treat as the spin injector. For the first time, we demonstrate simultaneously effect of normalized spin relaxation rate and injected current polarization on threshold current density reduction related to two form of spontaneous recombination. According to our result threshold current density reduction increases by simultaneously normalized spin relaxation rate reduction and increasing of injected current polarization. Maximum obtained threshold current density reduction values for linear and quadratic spontaneous recombination is 0.07 and 0.31. Moreover, we compute and compare the effect of value of injected electron current polarization on normalized spin-filtering interval for two types of recombination. Maximum obtained normalized spin-filtering interval values for linear and quadratic spontaneous recombination is 1.2 and 1.36. Finally we calculate spin-up optical gain and from this we obtained the conditions for achieving optimum optical gain. Maximum obtained spin-up optical gain valueis17.36.},
 year = {2014}
}

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