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Effect of Microwave Field on the Emergence of the Electromotive Force in Asymmetrical P-N-Junction

Received: 31 October 2014     Accepted: 17 December 2014     Published: 22 December 2014
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Abstract

In asymmetric p-n-junction in a strong microwave field for the analysis of voltage and current necessary to consider both the heating of electrons and holes. total current and voltage generated is determined not by the temperature of the hot electrons and the temperature of the carriers that are decisive. three-dimensional image on the surface f(jsc,Te Th,) and f (Uoc Te Th) to determine the possible range of the voltages and currents generated by the p-n-junction in a strong microwave field.

Published in American Journal of Electromagnetics and Applications (Volume 2, Issue 5)
DOI 10.11648/j.ajea.20140205.12
Page(s) 45-48
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

P-N-Junction, Microwave Field, Emf, CVC P-N-Junction

References
[1] G.Gulyamov, M.G.Dadamirzaev, S.R.Boydedaev. Emf of hot carriers due to the modulation of the surface potential in a strong microwave field. // FTP - St. Petersburg, 2000. - T.34. №5. - P. 572-575.
[2] Ablyazimova NA, Veynger AI, nutrition V.Elektricheskie properties of silicon p-n-junctions in strong microwave fields // Semiconductors. - St. Petersburg, 1988.- T.22. Number 11 - S.2001-2007.
[3] M.G.Dadamirzaev. Warming up of the charge carriers and rectification current asymmetric p-n-junction in the microwave electromagnetic field-fi. // FTP - St. Petersburg, 2011. - T.45. №3. - P. 299-302.
[4] Shamirzaev SH, Guliamov G. Dadamirzaev MG, Guliamov AG Ideality factor of the current-voltage characteristics of p-n-junctions in the strong field of the microwave // Physics and Technology poluprovodnikov- St. Petersburg, 2009.- T.43, №1. - P. 53-57.
[5] MG Dadamirzaev Warming up of the charge carriers and rectification current asymmetric p-n-junction in the microwave electromagnetic field // Semiconductors. - St. Petersburg, 2011. - T.45. №3. - P. 299-302.
[6] MG Dadamirzaev Heating of electrons and holes in asymmetric p-n-junction, located in a microwave field // Physical Engineering surface. -Ukraine, 2013. -t.11, №2, s.191-193.
[7] Shamirzaev SH, Guliamov G. Dadamirzaev MG, Guliamov AG Electromotive force at rectifying barrier in microwave electromagnetic field // Physical Zhurnal. Uzbek Tashkent, 2009. -11 (№2) .- S.122-127.
[8] P.I.Baransky, V.P.Klochkov, I.V.Potykevich. Semiconductor electronics. Handbook. (Kyiv., Naukova Dumka, 1975) s.704.
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  • APA Style

    Muhammadjon Gulomkodirovich Dadamirzaev. (2014). Effect of Microwave Field on the Emergence of the Electromotive Force in Asymmetrical P-N-Junction. American Journal of Electromagnetics and Applications, 2(5), 45-48. https://doi.org/10.11648/j.ajea.20140205.12

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    ACS Style

    Muhammadjon Gulomkodirovich Dadamirzaev. Effect of Microwave Field on the Emergence of the Electromotive Force in Asymmetrical P-N-Junction. Am. J. Electromagn. Appl. 2014, 2(5), 45-48. doi: 10.11648/j.ajea.20140205.12

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    AMA Style

    Muhammadjon Gulomkodirovich Dadamirzaev. Effect of Microwave Field on the Emergence of the Electromotive Force in Asymmetrical P-N-Junction. Am J Electromagn Appl. 2014;2(5):45-48. doi: 10.11648/j.ajea.20140205.12

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  • @article{10.11648/j.ajea.20140205.12,
      author = {Muhammadjon Gulomkodirovich Dadamirzaev},
      title = {Effect of Microwave Field on the Emergence of the Electromotive Force in Asymmetrical  P-N-Junction},
      journal = {American Journal of Electromagnetics and Applications},
      volume = {2},
      number = {5},
      pages = {45-48},
      doi = {10.11648/j.ajea.20140205.12},
      url = {https://doi.org/10.11648/j.ajea.20140205.12},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajea.20140205.12},
      abstract = {In asymmetric p-n-junction in a strong microwave field for the analysis of voltage and current necessary to consider both the heating of electrons and holes. total current and voltage generated is determined not by the temperature of the hot electrons and the temperature of the carriers that are decisive. three-dimensional image on the surface f(jsc,Te Th,) and f (Uoc Te Th) to determine the possible range of the voltages and currents generated by the p-n-junction in a strong microwave field.},
     year = {2014}
    }
    

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    T1  - Effect of Microwave Field on the Emergence of the Electromotive Force in Asymmetrical  P-N-Junction
    AU  - Muhammadjon Gulomkodirovich Dadamirzaev
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    DO  - 10.11648/j.ajea.20140205.12
    T2  - American Journal of Electromagnetics and Applications
    JF  - American Journal of Electromagnetics and Applications
    JO  - American Journal of Electromagnetics and Applications
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    PB  - Science Publishing Group
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    AB  - In asymmetric p-n-junction in a strong microwave field for the analysis of voltage and current necessary to consider both the heating of electrons and holes. total current and voltage generated is determined not by the temperature of the hot electrons and the temperature of the carriers that are decisive. three-dimensional image on the surface f(jsc,Te Th,) and f (Uoc Te Th) to determine the possible range of the voltages and currents generated by the p-n-junction in a strong microwave field.
    VL  - 2
    IS  - 5
    ER  - 

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Author Information
  • Namangan Engineering Pedagogical Institute, 716,003 Namangan, Uzbekistan

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