Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer

Jianting He; Shulian Yang; Qinqin Wei

doi:doi:10.11648/j.jmpt.20190501.11

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Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer

Jianting He, Shulian Yang, Qinqin Wei

Published in Journal of Photonic Materials and Technology (Volume 5, Issue 1)

Received: 29 January 2019 Accepted: 17 March 2019 Published: 8 April 2019

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Abstract

A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.

Published in	Journal of Photonic Materials and Technology (Volume 5, Issue 1)
DOI	10.11648/j.jmpt.20190501.11
Page(s)	1-4
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2019. Published by Science Publishing Group

Keywords

Structure Property, Optical Property, Crystallization, ZnO Buffer Layer, GaN Film

References

[1]	Hamdani F, Yeadon M, Dav id J S, et al. Microstructure and optical properties of epitaxial GaN on ZnO (001) grown by reactive molecular beam epitaxy. J. Appl Phys. Vol. 83, No. 2, 1998, pp. 983- 990.
[2]	Someya T, Wener R, Forchel A, et al. Room temperature lasing at blue wavelengths in gallium nitride microcavities. Science. Vol. 285, 1999, pp. 1905- 1906.
[3]	Mahammad S N, Salvador A A, Morkoc H. Emerging gallium nitride based devices. Proceeding s o f the IEEE. Vol. 83, No. 10, 1995, pp. 1306- 1355.
[4]	Xiaoyu Tan, Xiaoli J, Tongbo W, et al. Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy. Superlattices and Microstructures. Vol. 122, 2018, pp. 336-342.
[5]	Kim H W, Kim N H. Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering. Applied Surface Science. Vol. 236, No. 1-4, 2004, pp. 192- 197.
[6]	Goldberger J, He R, Yanfeng Z, et al. Single-crystal gallium nitride nanotubes. Nature. Vol. 422, No. 6932, 2003, pp. 599-602.
[7]	Haiyong G, Huizhao Z, Chengshan X, ea al. Synthesis of GaN Nanowires Through Ammoniating ZnO /Ga2O3 Films on Si Substrates. Journal of Semiconductors. Vol. 26, 2005, pp. 931- 935.
[8]	B. Y. Man, J. Wei, C. Yang, et al. Buffer layer ZnO-assistant fabrication of c-axis GaN films by using pulsed laser deposition on Si (111) substrate: annealing effects in ammonia ambience. Applied Physics A. Vol. 96, No. 4, 2009, pp. 827–831.
[9]	Jin- Hyo B, Carsten R, Wilson H. MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer. J. Cryst Growth. Vol. 189/190, 1998, pp. 439- 444.
[10]	Baoli L, Huizhao Z, Chengshan X, ea al. Synthesis of GaN nanowires through ammoniating Ga2O3/Nb thin films. Journal of function materials. Vol. 39, 2008, pp. 54- 56.
[11]	Yong S, Tatsuro M, Nobuo S. Outdiffusion of the excess carbon in SiC films into Si substrate during film growth. J. Appl Phys. Vol. 84, No. 11, 1998, pp. 6451- 6453.
[12]	Shoubin X, Xing Z, Ru H, et al. Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films. Applied Surface Science. Vol. 254, No. 21, 2008, pp. 6766-6769.
[13]	Xianglin L, Lianshan W, Dacheng L, et al. Properties of Low-Temperature-Deposited GaN Buffer Layers. Journal of Semiconductors. Vol. 20, No. 8, 1999, pp. 633- 638.
[14]	Haoxiang Z, Zhizhen Y, Huanming L, ea al. Photoluminescene spectra of GaN epilayer grown on Si substrate. Semiconductor Optoelectronics. Vol. 20, No. 2, 1999, pp. 120- 122.
[15]	Shoubin X, Xing Z, Ru H. Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering. Applied Physics A. Vol. 94, 2009, pp. 287-291.

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APA Style

Jianting He, Shulian Yang, Qinqin Wei. (2019). Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer. Journal of Photonic Materials and Technology, 5(1), 1-4. https://doi.org/10.11648/j.jmpt.20190501.11

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ACS Style

Jianting He; Shulian Yang; Qinqin Wei. Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer. J. Photonic Mater. Technol. 2019, 5(1), 1-4. doi: 10.11648/j.jmpt.20190501.11

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AMA Style

Jianting He, Shulian Yang, Qinqin Wei. Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer. J Photonic Mater Technol. 2019;5(1):1-4. doi: 10.11648/j.jmpt.20190501.11

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@article{10.11648/j.jmpt.20190501.11,
  author = {Jianting He and Shulian Yang and Qinqin Wei},
  title = {Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer},
  journal = {Journal of Photonic Materials and Technology},
  volume = {5},
  number = {1},
  pages = {1-4},
  doi = {10.11648/j.jmpt.20190501.11},
  url = {https://doi.org/10.11648/j.jmpt.20190501.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jmpt.20190501.11},
  abstract = {A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.},
 year = {2019}
}

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TY  - JOUR
T1  - Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer
AU  - Jianting He
AU  - Shulian Yang
AU  - Qinqin Wei
Y1  - 2019/04/08
PY  - 2019
N1  - https://doi.org/10.11648/j.jmpt.20190501.11
DO  - 10.11648/j.jmpt.20190501.11
T2  - Journal of Photonic Materials and Technology
JF  - Journal of Photonic Materials and Technology
JO  - Journal of Photonic Materials and Technology
SP  - 1
EP  - 4
PB  - Science Publishing Group
SN  - 2469-8431
UR  - https://doi.org/10.11648/j.jmpt.20190501.11
AB  - A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.
VL  - 5
IS  - 1
ER  -

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Author Information

Jianting He

College of Electrics and Electronics Engineering, Shandong University of Technology, Zibo, China
Shulian Yang

College of Electrics and Electronics Engineering, Shandong University of Technology, Zibo, China
Qinqin Wei

College of Electrics and Electronics Engineering, Shandong University of Technology, Zibo, China

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Plain Text BibTeX RIS

APA Style

Jianting He, Shulian Yang, Qinqin Wei. (2019). Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer. Journal of Photonic Materials and Technology, 5(1), 1-4. https://doi.org/10.11648/j.jmpt.20190501.11

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ACS Style

Jianting He; Shulian Yang; Qinqin Wei. Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer. J. Photonic Mater. Technol. 2019, 5(1), 1-4. doi: 10.11648/j.jmpt.20190501.11

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AMA Style

Jianting He, Shulian Yang, Qinqin Wei. Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer. J Photonic Mater Technol. 2019;5(1):1-4. doi: 10.11648/j.jmpt.20190501.11

Copy | Download

@article{10.11648/j.jmpt.20190501.11,
  author = {Jianting He and Shulian Yang and Qinqin Wei},
  title = {Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer},
  journal = {Journal of Photonic Materials and Technology},
  volume = {5},
  number = {1},
  pages = {1-4},
  doi = {10.11648/j.jmpt.20190501.11},
  url = {https://doi.org/10.11648/j.jmpt.20190501.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jmpt.20190501.11},
  abstract = {A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.},
 year = {2019}
}

Copy | Download

TY  - JOUR
T1  - Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer
AU  - Jianting He
AU  - Shulian Yang
AU  - Qinqin Wei
Y1  - 2019/04/08
PY  - 2019
N1  - https://doi.org/10.11648/j.jmpt.20190501.11
DO  - 10.11648/j.jmpt.20190501.11
T2  - Journal of Photonic Materials and Technology
JF  - Journal of Photonic Materials and Technology
JO  - Journal of Photonic Materials and Technology
SP  - 1
EP  - 4
PB  - Science Publishing Group
SN  - 2469-8431
UR  - https://doi.org/10.11648/j.jmpt.20190501.11
AB  - A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.
VL  - 5
IS  - 1
ER  -

Copy | Download