Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network

Henry Erialuode Amhenrior

doi:doi:10.11648/j.nsnm.20180401.12

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Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network

Henry Erialuode Amhenrior

Published in Nanoscience and Nanometrology (Volume 4, Issue 1)

Received: 19 July 2018 Accepted: 3 August 2018 Published: 31 August 2018

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Abstract

This paper presents the analysis of the h-parameter of a single stage small signal transistor amplifier using two-port network. This is motivated by the need to have the rudimentary knowledge of the h-parameter transistor analysis model and to demonstrate its equivalence in the three configuration of the transistor. In this analysis, it was borne in mind the characteristics of a small signal operating conditions of the transistor. Among these characteristics is the assumption that Small – signal operations applies when variations are restricted to such a small amplitude that the partial differential derivatives can be applied. In the methodology, the transistor two-port network was used in deriving the hybrid parameter performance quantities from the first principle by applying partial derivative mathematical tool. The four variables of the input and output of the two-port network namely the currents and voltages which could be combined in six different ways were identified. These were described and analyzed by mathematical functions which relates one of the four variables to two other variables at a time, and by this, six various functions were generated. The partial derivatives of these functions were obtained and these gave the performance quantities which are the key components of the h parameter equations. The initial conditions of each of the component parameters where properly observed and substituted appropriately. This was then transformed into the equivalent circuits of the three transistor configurations. Since the transistor is frequently used for the amplification of sinusoidal currents, the changes in instantaneous total voltage and current were then replaced by root mean square ac quantities, which are considered to be impressed on the direct value. The results obtained are the basic h-parameter equations and the key components of the h parameter transistor model namely the Input Resistance, the Reverse Voltage Gain, the Forward Current Gain and the Output Admittance.

Published in	Nanoscience and Nanometrology (Volume 4, Issue 1)
DOI	10.11648/j.nsnm.20180401.12
Page(s)	9-15
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

H-Parameter, Two-Port Network, Performance Quantities, Equivalent Circuits

References

[1]	“Analysis of Small-signal Transistor Amplifiers,” Routledge Taylor and Francis Group, 2018.
[2]	Andy Collinson, "Transistor Hybrid Model,” Circuit Exchange International, 2018.
[3]	BrainKart, “Small Signal Low Frequency h- parameter Model,” BrainKart Lectures, 2017- 2018.
[4]	Charles H. E., “Electronic Amplifier,” Delmar Publishers, Albany, New York, 1979.
[5]	Robert B. and Louis N., “Electronic Devices and Circuit Theory,” Prentice-Hall International, Inc. USA, 1996.
[6]	Theraja A. K. and Theraja B. L., “A textbook of Technology,” S. Chad & Company Ltd, Raw Nagar, Nardeth, 1999.
[7]	Lobna A. Said, Ahmed G Radwan, A. H. Madian and A. M. Soliman, “Two Port Network Analysis for three impedance based Oscillators,” ResearchGate, December 2011. DOI: 10.1109/ICM.2011.6177421.
[8]	Ahmed S. Elwakil and Muhammad Ali Al- Radhawi “All possible second-order four- impedance two-stage Colpitts oscillators,” The Institution of Engineering and Technology Circuits, Devices & Systems, Vol. 5, Iss. 3, pp.196–202, 2011. DOI: 10.1049/iet- cds.2010.0201
[9]	Ahmed S. Elwakil “Design of non- balanced cross-coupled oscillators with no matching Requirements,” The Institution of Engineering and Technology Circuits, Devices & Systems, 2010a, Vol. 4, Iss. 5, pp. 365–373 DOI: 10.1049/iet- cds.2010.0030.
[10]	Ahmed S. Elwakil, “Motivating two-port network analysis through elementary and advanced examples,” International Journal of Electrical Engineering Education, 2010b.
[11]	David B Haviland, “The Transistor in a Century of Electronics,” Nobel Media, 2002.
[12]	“The History of the Transistor,” San José State University, Silicon Valley, & Tornado Alley, USA.
[13]	Michael Riordan, “The Lost History of the Transistor,” IEEE Spectrum, 2004.
[14]	Jose Tadeu Arantes, “Transistor that mimics neurons developed,” 2017.
[15]	Eneh I. I., “Principles of Electronic Devices and circuits,” 1999. Rojoint Communication Ltd, Enugu Nigeria.
[16]	Ruye Wang, “Small-Signal Model and H parameters,” semiconductor Devices and Circuit 2017.

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Henry Erialuode Amhenrior. (2018). Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network. Nanoscience and Nanometrology, 4(1), 9-15. https://doi.org/10.11648/j.nsnm.20180401.12

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ACS Style

Henry Erialuode Amhenrior. Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network. Nanosci. Nanometrol. 2018, 4(1), 9-15. doi: 10.11648/j.nsnm.20180401.12

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AMA Style

Henry Erialuode Amhenrior. Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network. Nanosci Nanometrol. 2018;4(1):9-15. doi: 10.11648/j.nsnm.20180401.12

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@article{10.11648/j.nsnm.20180401.12,
  author = {Henry Erialuode Amhenrior},
  title = {Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network},
  journal = {Nanoscience and Nanometrology},
  volume = {4},
  number = {1},
  pages = {9-15},
  doi = {10.11648/j.nsnm.20180401.12},
  url = {https://doi.org/10.11648/j.nsnm.20180401.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nsnm.20180401.12},
  abstract = {This paper presents the analysis of the h-parameter of a single stage small signal transistor amplifier using two-port network. This is motivated by the need to have the rudimentary knowledge of the h-parameter transistor analysis model and to demonstrate its equivalence in the three configuration of the transistor. In this analysis, it was borne in mind the characteristics of a small signal operating conditions of the transistor. Among these characteristics is the assumption that Small – signal operations applies when variations are restricted to such a small amplitude that the partial differential derivatives can be applied. In the methodology, the transistor two-port network was used in deriving the hybrid parameter performance quantities from the first principle by applying partial derivative mathematical tool. The four variables of the input and output of the two-port network namely the currents and voltages which could be combined in six different ways were identified. These were described and analyzed by mathematical functions which relates one of the four variables to two other variables at a time, and by this, six various functions were generated. The partial derivatives of these functions were obtained and these gave the performance quantities which are the key components of the h parameter equations. The initial conditions of each of the component parameters where properly observed and substituted appropriately. This was then transformed into the equivalent circuits of the three transistor configurations. Since the transistor is frequently used for the amplification of sinusoidal currents, the changes in instantaneous total voltage and current were then replaced by root mean square ac quantities, which are considered to be impressed on the direct value. The results obtained are the basic h-parameter equations and the key components of the h parameter transistor model namely the Input Resistance, the Reverse Voltage Gain, the Forward Current Gain and the Output Admittance.},
 year = {2018}
}

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TY  - JOUR
T1  - Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network
AU  - Henry Erialuode Amhenrior
Y1  - 2018/08/31
PY  - 2018
N1  - https://doi.org/10.11648/j.nsnm.20180401.12
DO  - 10.11648/j.nsnm.20180401.12
T2  - Nanoscience and Nanometrology
JF  - Nanoscience and Nanometrology
JO  - Nanoscience and Nanometrology
SP  - 9
EP  - 15
PB  - Science Publishing Group
SN  - 2472-3630
UR  - https://doi.org/10.11648/j.nsnm.20180401.12
AB  - This paper presents the analysis of the h-parameter of a single stage small signal transistor amplifier using two-port network. This is motivated by the need to have the rudimentary knowledge of the h-parameter transistor analysis model and to demonstrate its equivalence in the three configuration of the transistor. In this analysis, it was borne in mind the characteristics of a small signal operating conditions of the transistor. Among these characteristics is the assumption that Small – signal operations applies when variations are restricted to such a small amplitude that the partial differential derivatives can be applied. In the methodology, the transistor two-port network was used in deriving the hybrid parameter performance quantities from the first principle by applying partial derivative mathematical tool. The four variables of the input and output of the two-port network namely the currents and voltages which could be combined in six different ways were identified. These were described and analyzed by mathematical functions which relates one of the four variables to two other variables at a time, and by this, six various functions were generated. The partial derivatives of these functions were obtained and these gave the performance quantities which are the key components of the h parameter equations. The initial conditions of each of the component parameters where properly observed and substituted appropriately. This was then transformed into the equivalent circuits of the three transistor configurations. Since the transistor is frequently used for the amplification of sinusoidal currents, the changes in instantaneous total voltage and current were then replaced by root mean square ac quantities, which are considered to be impressed on the direct value. The results obtained are the basic h-parameter equations and the key components of the h parameter transistor model namely the Input Resistance, the Reverse Voltage Gain, the Forward Current Gain and the Output Admittance.
VL  - 4
IS  - 1
ER  -

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Author Information

Henry Erialuode Amhenrior

Department of Electrical/Electronic Engineering, Faculty of Engineering, University of Benin, Benin City, Nigeria

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APA Style

Henry Erialuode Amhenrior. (2018). Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network. Nanoscience and Nanometrology, 4(1), 9-15. https://doi.org/10.11648/j.nsnm.20180401.12

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ACS Style

Henry Erialuode Amhenrior. Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network. Nanosci. Nanometrol. 2018, 4(1), 9-15. doi: 10.11648/j.nsnm.20180401.12

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AMA Style

Henry Erialuode Amhenrior. Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network. Nanosci Nanometrol. 2018;4(1):9-15. doi: 10.11648/j.nsnm.20180401.12

Copy | Download

@article{10.11648/j.nsnm.20180401.12,
  author = {Henry Erialuode Amhenrior},
  title = {Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network},
  journal = {Nanoscience and Nanometrology},
  volume = {4},
  number = {1},
  pages = {9-15},
  doi = {10.11648/j.nsnm.20180401.12},
  url = {https://doi.org/10.11648/j.nsnm.20180401.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nsnm.20180401.12},
  abstract = {This paper presents the analysis of the h-parameter of a single stage small signal transistor amplifier using two-port network. This is motivated by the need to have the rudimentary knowledge of the h-parameter transistor analysis model and to demonstrate its equivalence in the three configuration of the transistor. In this analysis, it was borne in mind the characteristics of a small signal operating conditions of the transistor. Among these characteristics is the assumption that Small – signal operations applies when variations are restricted to such a small amplitude that the partial differential derivatives can be applied. In the methodology, the transistor two-port network was used in deriving the hybrid parameter performance quantities from the first principle by applying partial derivative mathematical tool. The four variables of the input and output of the two-port network namely the currents and voltages which could be combined in six different ways were identified. These were described and analyzed by mathematical functions which relates one of the four variables to two other variables at a time, and by this, six various functions were generated. The partial derivatives of these functions were obtained and these gave the performance quantities which are the key components of the h parameter equations. The initial conditions of each of the component parameters where properly observed and substituted appropriately. This was then transformed into the equivalent circuits of the three transistor configurations. Since the transistor is frequently used for the amplification of sinusoidal currents, the changes in instantaneous total voltage and current were then replaced by root mean square ac quantities, which are considered to be impressed on the direct value. The results obtained are the basic h-parameter equations and the key components of the h parameter transistor model namely the Input Resistance, the Reverse Voltage Gain, the Forward Current Gain and the Output Admittance.},
 year = {2018}
}

Copy | Download

TY  - JOUR
T1  - Analysis of Hybrid Parameters of a Single Stage Small Signal Transistor Amplifier Using Two-Port Network
AU  - Henry Erialuode Amhenrior
Y1  - 2018/08/31
PY  - 2018
N1  - https://doi.org/10.11648/j.nsnm.20180401.12
DO  - 10.11648/j.nsnm.20180401.12
T2  - Nanoscience and Nanometrology
JF  - Nanoscience and Nanometrology
JO  - Nanoscience and Nanometrology
SP  - 9
EP  - 15
PB  - Science Publishing Group
SN  - 2472-3630
UR  - https://doi.org/10.11648/j.nsnm.20180401.12
AB  - This paper presents the analysis of the h-parameter of a single stage small signal transistor amplifier using two-port network. This is motivated by the need to have the rudimentary knowledge of the h-parameter transistor analysis model and to demonstrate its equivalence in the three configuration of the transistor. In this analysis, it was borne in mind the characteristics of a small signal operating conditions of the transistor. Among these characteristics is the assumption that Small – signal operations applies when variations are restricted to such a small amplitude that the partial differential derivatives can be applied. In the methodology, the transistor two-port network was used in deriving the hybrid parameter performance quantities from the first principle by applying partial derivative mathematical tool. The four variables of the input and output of the two-port network namely the currents and voltages which could be combined in six different ways were identified. These were described and analyzed by mathematical functions which relates one of the four variables to two other variables at a time, and by this, six various functions were generated. The partial derivatives of these functions were obtained and these gave the performance quantities which are the key components of the h parameter equations. The initial conditions of each of the component parameters where properly observed and substituted appropriately. This was then transformed into the equivalent circuits of the three transistor configurations. Since the transistor is frequently used for the amplification of sinusoidal currents, the changes in instantaneous total voltage and current were then replaced by root mean square ac quantities, which are considered to be impressed on the direct value. The results obtained are the basic h-parameter equations and the key components of the h parameter transistor model namely the Input Resistance, the Reverse Voltage Gain, the Forward Current Gain and the Output Admittance.
VL  - 4
IS  - 1
ER  -

Copy | Download