The paper considers the technology of thermal migration for the formation of a through-layer insulation of individual crystals in the manufacture of power electronics devices. The initial Al-Si layer for the thermal migration process is formed in SiO2 windows from the Al melt and the surface disordered Si layer dissolved in it. Selective dissolution of Si occurs when the surface of the moving wafer sequentially contacts the Al melt ribbon, where the convection flows of the melt remove the dissolved Si atoms to the melt volume. In the process, it is possible to control the thickness of the Al-Si melt formed in the SiO2 windows. The formation of the p+-Si*(Al) layer, which is deposited during recrystallization from the Al-Si melt during the cooling of the wafers, the high concentration of Si and the homogeneity of the Al-Si layer ensure the isotropic nature of the dissolution process and, accordingly, the faceless immersion of the discrete zone during the subsequent thermal migration process. The observed change in the polarity of the brightness contrast of the surfaces of the discrete zone and adjacent silicon in the temperature range of 1100-1130°C allows us to control the beginning of the high-temperature immersion process. The article also shows the dependence of the thickness of the Al-Si layer on the parameters of its formation process.
| Published in | Science Discovery Materials (Volume 1, Issue 1) |
| DOI | 10.11648/j.sdm.20260101.12 |
| Page(s) | 25-33 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2026. Published by Science Publishing Group |
Melting Al, Dissolving Si, Forming Al-Si, Recrystalization, Thermomigration
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APA Style
Kravchyna, V., Polukhin, O. (2026). Formation and Facet Less Immersion of Discrete Al-Si Areas on Unpolished Wafers in Silicon Thermomigration Technology. Science Discovery Materials, 1(1), 25-33. https://doi.org/10.11648/j.sdm.20260101.12
ACS Style
Kravchyna, V.; Polukhin, O. Formation and Facet Less Immersion of Discrete Al-Si Areas on Unpolished Wafers in Silicon Thermomigration Technology. Sci. Discov. Mater. 2026, 1(1), 25-33. doi: 10.11648/j.sdm.20260101.12
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Download@article{10.11648/j.sdm.20260101.12,
author = {Vitalii Kravchyna and Oleksii Polukhin},
title = {Formation and Facet Less Immersion of Discrete Al-Si Areas on Unpolished Wafers in Silicon Thermomigration Technology},
journal = {Science Discovery Materials},
volume = {1},
number = {1},
pages = {25-33},
doi = {10.11648/j.sdm.20260101.12},
url = {https://doi.org/10.11648/j.sdm.20260101.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sdm.20260101.12},
abstract = {The paper considers the technology of thermal migration for the formation of a through-layer insulation of individual crystals in the manufacture of power electronics devices. The initial Al-Si layer for the thermal migration process is formed in SiO2 windows from the Al melt and the surface disordered Si layer dissolved in it. Selective dissolution of Si occurs when the surface of the moving wafer sequentially contacts the Al melt ribbon, where the convection flows of the melt remove the dissolved Si atoms to the melt volume. In the process, it is possible to control the thickness of the Al-Si melt formed in the SiO2 windows. The formation of the p+-Si*(Al) layer, which is deposited during recrystallization from the Al-Si melt during the cooling of the wafers, the high concentration of Si and the homogeneity of the Al-Si layer ensure the isotropic nature of the dissolution process and, accordingly, the faceless immersion of the discrete zone during the subsequent thermal migration process. The observed change in the polarity of the brightness contrast of the surfaces of the discrete zone and adjacent silicon in the temperature range of 1100-1130°C allows us to control the beginning of the high-temperature immersion process. The article also shows the dependence of the thickness of the Al-Si layer on the parameters of its formation process.},
year = {2026}
}
TY - JOUR T1 - Formation and Facet Less Immersion of Discrete Al-Si Areas on Unpolished Wafers in Silicon Thermomigration Technology AU - Vitalii Kravchyna AU - Oleksii Polukhin Y1 - 2026/02/11 PY - 2026 N1 - https://doi.org/10.11648/j.sdm.20260101.12 DO - 10.11648/j.sdm.20260101.12 T2 - Science Discovery Materials JF - Science Discovery Materials JO - Science Discovery Materials SP - 25 EP - 33 PB - Science Publishing Group UR - https://doi.org/10.11648/j.sdm.20260101.12 AB - The paper considers the technology of thermal migration for the formation of a through-layer insulation of individual crystals in the manufacture of power electronics devices. The initial Al-Si layer for the thermal migration process is formed in SiO2 windows from the Al melt and the surface disordered Si layer dissolved in it. Selective dissolution of Si occurs when the surface of the moving wafer sequentially contacts the Al melt ribbon, where the convection flows of the melt remove the dissolved Si atoms to the melt volume. In the process, it is possible to control the thickness of the Al-Si melt formed in the SiO2 windows. The formation of the p+-Si*(Al) layer, which is deposited during recrystallization from the Al-Si melt during the cooling of the wafers, the high concentration of Si and the homogeneity of the Al-Si layer ensure the isotropic nature of the dissolution process and, accordingly, the faceless immersion of the discrete zone during the subsequent thermal migration process. The observed change in the polarity of the brightness contrast of the surfaces of the discrete zone and adjacent silicon in the temperature range of 1100-1130°C allows us to control the beginning of the high-temperature immersion process. The article also shows the dependence of the thickness of the Al-Si layer on the parameters of its formation process. VL - 1 IS - 1 ER -
Department of Electronic Information Systems and Software, Engineering Educational Scientific Institute Named After Yu.M. Potebnia Zaporizhia National University, Zaporizhia, Ukraine
Department of Electronic Information Systems and Software, Engineering Educational Scientific Institute Named After Yu.M. Potebnia Zaporizhia National University, Zaporizhia, Ukraine
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