Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Md Shofiqul Islam Khan

doi:doi:10.11648/j.jeee.20130105.12

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Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Md Shofiqul Islam Khan

Published in Journal of Electrical and Electronic Engineering (Volume 1, Issue 5)

Received: 17 November 2013 Published: 30 November 2013

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Abstract

We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a non-linear expression for Fermi level (EF) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (ns) variation with gate voltage (VG) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.

Published in	Journal of Electrical and Electronic Engineering (Volume 1, Issue 5)
DOI	10.11648/j.jeee.20130105.12
Page(s)	114-122
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

AlN/GaN/AlGaN DHFET, Double Heterojunction, Analytical Charge Control Model, 2DEG, Fermi Level

References

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Md Shofiqul Islam Khan. (2013). Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor. Journal of Electrical and Electronic Engineering, 1(5), 114-122. https://doi.org/10.11648/j.jeee.20130105.12

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ACS Style

Md Shofiqul Islam Khan. Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor. J. Electr. Electron. Eng. 2013, 1(5), 114-122. doi: 10.11648/j.jeee.20130105.12

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AMA Style

Md Shofiqul Islam Khan. Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor. J Electr Electron Eng. 2013;1(5):114-122. doi: 10.11648/j.jeee.20130105.12

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@article{10.11648/j.jeee.20130105.12,
  author = {Md Shofiqul Islam Khan},
  title = {Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {1},
  number = {5},
  pages = {114-122},
  doi = {10.11648/j.jeee.20130105.12},
  url = {https://doi.org/10.11648/j.jeee.20130105.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20130105.12},
  abstract = {We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a non-linear expression for Fermi level (EF) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (ns) variation with gate voltage (VG) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.},
 year = {2013}
}

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TY  - JOUR
T1  - Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor
AU  - Md Shofiqul Islam Khan
Y1  - 2013/11/30
PY  - 2013
N1  - https://doi.org/10.11648/j.jeee.20130105.12
DO  - 10.11648/j.jeee.20130105.12
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 114
EP  - 122
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20130105.12
AB  - We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a non-linear expression for Fermi level (EF) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (ns) variation with gate voltage (VG) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.
VL  - 1
IS  - 5
ER  -

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Author Information

Md Shofiqul Islam Khan

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), Bangladesh

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APA Style

Md Shofiqul Islam Khan. (2013). Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor. Journal of Electrical and Electronic Engineering, 1(5), 114-122. https://doi.org/10.11648/j.jeee.20130105.12

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ACS Style

Md Shofiqul Islam Khan. Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor. J. Electr. Electron. Eng. 2013, 1(5), 114-122. doi: 10.11648/j.jeee.20130105.12

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AMA Style

Md Shofiqul Islam Khan. Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor. J Electr Electron Eng. 2013;1(5):114-122. doi: 10.11648/j.jeee.20130105.12

Copy | Download

@article{10.11648/j.jeee.20130105.12,
  author = {Md Shofiqul Islam Khan},
  title = {Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {1},
  number = {5},
  pages = {114-122},
  doi = {10.11648/j.jeee.20130105.12},
  url = {https://doi.org/10.11648/j.jeee.20130105.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20130105.12},
  abstract = {We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a non-linear expression for Fermi level (EF) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (ns) variation with gate voltage (VG) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor
AU  - Md Shofiqul Islam Khan
Y1  - 2013/11/30
PY  - 2013
N1  - https://doi.org/10.11648/j.jeee.20130105.12
DO  - 10.11648/j.jeee.20130105.12
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 114
EP  - 122
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20130105.12
AB  - We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a non-linear expression for Fermi level (EF) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (ns) variation with gate voltage (VG) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.
VL  - 1
IS  - 5
ER  -

Copy | Download