Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe<sub>2</sub> (CIS) of P<sup>+</sup>N Type

Abdoul Aziz Correa; Mamadou Dia; El Hadji Mamadou Keita; Chamsdine Sow; Babacar Mbow

doi:doi:10.11648/j.jmpt.20200601.11

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Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe₂ (CIS) of P⁺N Type

Abdoul Aziz Correa, Mamadou Dia, El Hadji Mamadou Keita, Chamsdine Sow, Babacar Mbow

Published in Journal of Photonic Materials and Technology (Volume 6, Issue 1)

Received: 29 June 2020 Accepted: 13 July 2020 Published: 4 August 2020

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Abstract

The effects of impact ionization in the space charge zone on the multiplication factor of the carriers, the noise excess factor, and the multiplication voltage (avalanche voltage) are modeled for avalanche photodiodes (APD). Research has shown that photomultiplication of charge carriers and impact ionization allow to improve the quantum efficiency of avalanche photodiodes. However, these phenomena are not without effect on the background noise which tends to disturb the signal of these devices. The aim of this article is therefore to verify the effect of impact ionization on this noise characterized by an noise excess factor. Our work consists, at first, to establish the mathematical expressions linking the characteristic parameters of photomultiplication, impact ionization and noise before carring out simulations on photodiode model based on CuInSe₂ (CIS) of the P⁺N type. In our photocurrent calculation models, we first worked in the absence of electronic ionization, then in the presence of electronic ionization. Our simulation results confirm that ionization by impact in the part of the multiplication layer far from the active surface (the junction) increases the noise excess factor. We were able to note that the effect of impact ionization places strict constraints on the doping level of the carrier multiplication layer in order to minimize noise. However, the noise excess factor should be reduced in the layer (CuInSe₂ (N)) where the electric field and the multiplication factor of the charge carriers are important. We have shown that the gap between the ionization coefficients of the carriers (electrons and holes), reduces the excess noise in the avalanche layer (carrier multiplication layer or space charge area). For a coefficients ionization ratio k=k_p/k_n=11, a low value of the noise excess factor of the order of 1.5 is obtained with a multiplication coefficient Mph=2.

Published in	Journal of Photonic Materials and Technology (Volume 6, Issue 1)
DOI	10.11648/j.jmpt.20200601.11
Page(s)	1-6
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

Noise Excess Factor, Ionization Coefficient, Photomultiplication, Solar Photodiode

References

[1]	J. S. 0, Member, IEEE, C. H. Tan, Member, IEEE, J. P. R. David, Senior Member, IEEE, and G. J. Rees «Effect of Impact Ionization in the InGaAs Absorber on Excess Noise of Avalanche Photodiodes». IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 8, AUGUST 2005.
[2]	J. C. Campbell et al.,“Recent advances in avalanche photodiodes,” IEEE J. Sel. Topics Quantum Electron, vol. 10, no. 4, pp. 777–787, Jul./Aug. 2004.
[3]	GARTNER, W. W., Depletion-Layer Photoeffects in Semiconductors, Article in Physical Review. 116 (1): 84-87. October1959.
[4]	Alabedra, C. Maille, D. Ratsira, G. Lecoy. Utilisation des mesures de bruit pour la détermination du photocourant primaire dans les photodiodes à avalanche N₊P∏P₊ au Silicium. Revue de Physique Appliquée, 1980, 15 (7), pp. 1201–1208.
[5]	A. Aziz Corréa, B. Mbow, M. Dia, Y. Tabar, E. Mamadou Keita, C. Sène «Theoretical determination of the multiplication factor in the CuInSe₂ (CIS) P⁺N Photodiodes». Université Cheikh Anta Diop de Dakar. J. IJESRT. Vol. 6, ISSN: 2277-9655. Octobre, 2017.
[6]	Mamadou DIA. «Etudes Théoriques de la Réponse Spectrale dans le Proche Infrarouge des Photodétecteurs à base des Antimoniures et leurs Alliages». Thèse de Doctorat Unique, Université Cheikh Anta Diop de Dakar, (07 Décembre 2017).
[7]	H. Luquet, M. Pétrotin, L. Gouskov, C. Llinares, H. Archidi, M. Lahbabi, M. Karim, and B. Mbow «Coefficients d’ionisation dans Ga_0,96Al_0,04Sb». J. Appl. Phys., Vol. 68, No. 8. 15 October, 1990.
[8]	G. E. Stillman, L. W. cook, N. Tabatabaie, G. E, Bulman, and V. M. Roblins. IEEE Trans. Devices ED-30, 364 (1983). «Photocurrent amplification and noise-signal ratio in avalanche photodiodes».
[9]	Karine ISOIRD, Thèse de Doctorat “Etude de la tenue en tension des dispositifs de puissance en carbure de silicium par caractérisations OBIC et électriques” Lyon (2001).
[10]	P. Denis «Modélisation, fabrication et évaluation des photodiodes à avalanche polarisées en mode Geiger pour la détection du photon unique dans les applications Astrophysiques», Université Toulouse III-Paul Sabatier, (2008).
[11]	François CERF, Hermes «Les composants optoélectroniques», Science Publications, 1999.
[12]	S. M. Sze, John Wiley and Sons «Physics of Semiconductor Devices» 3rd édition, Welley-intersciencePublication. 1981.
[13]	MC INTYRE, R. J., IEEE Trans. Electron. Devices TED 13 (1966) 164-168. «Multiplication noise in uniform avalanche diodes».

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Abdoul Aziz Correa, Mamadou Dia, El Hadji Mamadou Keita, Chamsdine Sow, Babacar Mbow. (2020). Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type. Journal of Photonic Materials and Technology, 6(1), 1-6. https://doi.org/10.11648/j.jmpt.20200601.11

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Abdoul Aziz Correa; Mamadou Dia; El Hadji Mamadou Keita; Chamsdine Sow; Babacar Mbow. Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type. J. Photonic Mater. Technol. 2020, 6(1), 1-6. doi: 10.11648/j.jmpt.20200601.11

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AMA Style

Abdoul Aziz Correa, Mamadou Dia, El Hadji Mamadou Keita, Chamsdine Sow, Babacar Mbow. Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type. J Photonic Mater Technol. 2020;6(1):1-6. doi: 10.11648/j.jmpt.20200601.11

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@article{10.11648/j.jmpt.20200601.11,
  author = {Abdoul Aziz Correa and Mamadou Dia and El Hadji Mamadou Keita and Chamsdine Sow and Babacar Mbow},
  title = {Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type},
  journal = {Journal of Photonic Materials and Technology},
  volume = {6},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.jmpt.20200601.11},
  url = {https://doi.org/10.11648/j.jmpt.20200601.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jmpt.20200601.11},
  abstract = {The effects of impact ionization in the space charge zone on the multiplication factor of the carriers, the noise excess factor, and the multiplication voltage (avalanche voltage) are modeled for avalanche photodiodes (APD). Research has shown that photomultiplication of charge carriers and impact ionization allow to improve the quantum efficiency of avalanche photodiodes. However, these phenomena are not without effect on the background noise which tends to disturb the signal of these devices. The aim of this article is therefore to verify the effect of impact ionization on this noise characterized by an noise excess factor. Our work consists, at first, to establish the mathematical expressions linking the characteristic parameters of photomultiplication, impact ionization and noise before carring out simulations on photodiode model based on CuInSe2 (CIS) of the P+N type. In our photocurrent calculation models, we first worked in the absence of electronic ionization, then in the presence of electronic ionization. Our simulation results confirm that ionization by impact in the part of the multiplication layer far from the active surface (the junction) increases the noise excess factor. We were able to note that the effect of impact ionization places strict constraints on the doping level of the carrier multiplication layer in order to minimize noise. However, the noise excess factor should be reduced in the layer (CuInSe2 (N)) where the electric field and the multiplication factor of the charge carriers are important. We have shown that the gap between the ionization coefficients of the carriers (electrons and holes), reduces the excess noise in the avalanche layer (carrier multiplication layer or space charge area). For a coefficients ionization ratio k=kp/kn=11, a low value of the noise excess factor of the order of 1.5 is obtained with a multiplication coefficient Mph=2.},
 year = {2020}
}

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TY  - JOUR
T1  - Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type
AU  - Abdoul Aziz Correa
AU  - Mamadou Dia
AU  - El Hadji Mamadou Keita
AU  - Chamsdine Sow
AU  - Babacar Mbow
Y1  - 2020/08/04
PY  - 2020
N1  - https://doi.org/10.11648/j.jmpt.20200601.11
DO  - 10.11648/j.jmpt.20200601.11
T2  - Journal of Photonic Materials and Technology
JF  - Journal of Photonic Materials and Technology
JO  - Journal of Photonic Materials and Technology
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2469-8431
UR  - https://doi.org/10.11648/j.jmpt.20200601.11
AB  - The effects of impact ionization in the space charge zone on the multiplication factor of the carriers, the noise excess factor, and the multiplication voltage (avalanche voltage) are modeled for avalanche photodiodes (APD). Research has shown that photomultiplication of charge carriers and impact ionization allow to improve the quantum efficiency of avalanche photodiodes. However, these phenomena are not without effect on the background noise which tends to disturb the signal of these devices. The aim of this article is therefore to verify the effect of impact ionization on this noise characterized by an noise excess factor. Our work consists, at first, to establish the mathematical expressions linking the characteristic parameters of photomultiplication, impact ionization and noise before carring out simulations on photodiode model based on CuInSe2 (CIS) of the P+N type. In our photocurrent calculation models, we first worked in the absence of electronic ionization, then in the presence of electronic ionization. Our simulation results confirm that ionization by impact in the part of the multiplication layer far from the active surface (the junction) increases the noise excess factor. We were able to note that the effect of impact ionization places strict constraints on the doping level of the carrier multiplication layer in order to minimize noise. However, the noise excess factor should be reduced in the layer (CuInSe2 (N)) where the electric field and the multiplication factor of the charge carriers are important. We have shown that the gap between the ionization coefficients of the carriers (electrons and holes), reduces the excess noise in the avalanche layer (carrier multiplication layer or space charge area). For a coefficients ionization ratio k=kp/kn=11, a low value of the noise excess factor of the order of 1.5 is obtained with a multiplication coefficient Mph=2.
VL  - 6
IS  - 1
ER  -

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Author Information

Abdoul Aziz Correa

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Mamadou Dia

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
El Hadji Mamadou Keita

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Chamsdine Sow

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Babacar Mbow

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

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APA Style

Abdoul Aziz Correa, Mamadou Dia, El Hadji Mamadou Keita, Chamsdine Sow, Babacar Mbow. (2020). Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type. Journal of Photonic Materials and Technology, 6(1), 1-6. https://doi.org/10.11648/j.jmpt.20200601.11

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ACS Style

Abdoul Aziz Correa; Mamadou Dia; El Hadji Mamadou Keita; Chamsdine Sow; Babacar Mbow. Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type. J. Photonic Mater. Technol. 2020, 6(1), 1-6. doi: 10.11648/j.jmpt.20200601.11

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AMA Style

Abdoul Aziz Correa, Mamadou Dia, El Hadji Mamadou Keita, Chamsdine Sow, Babacar Mbow. Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type. J Photonic Mater Technol. 2020;6(1):1-6. doi: 10.11648/j.jmpt.20200601.11

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@article{10.11648/j.jmpt.20200601.11,
  author = {Abdoul Aziz Correa and Mamadou Dia and El Hadji Mamadou Keita and Chamsdine Sow and Babacar Mbow},
  title = {Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type},
  journal = {Journal of Photonic Materials and Technology},
  volume = {6},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.jmpt.20200601.11},
  url = {https://doi.org/10.11648/j.jmpt.20200601.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jmpt.20200601.11},
  abstract = {The effects of impact ionization in the space charge zone on the multiplication factor of the carriers, the noise excess factor, and the multiplication voltage (avalanche voltage) are modeled for avalanche photodiodes (APD). Research has shown that photomultiplication of charge carriers and impact ionization allow to improve the quantum efficiency of avalanche photodiodes. However, these phenomena are not without effect on the background noise which tends to disturb the signal of these devices. The aim of this article is therefore to verify the effect of impact ionization on this noise characterized by an noise excess factor. Our work consists, at first, to establish the mathematical expressions linking the characteristic parameters of photomultiplication, impact ionization and noise before carring out simulations on photodiode model based on CuInSe2 (CIS) of the P+N type. In our photocurrent calculation models, we first worked in the absence of electronic ionization, then in the presence of electronic ionization. Our simulation results confirm that ionization by impact in the part of the multiplication layer far from the active surface (the junction) increases the noise excess factor. We were able to note that the effect of impact ionization places strict constraints on the doping level of the carrier multiplication layer in order to minimize noise. However, the noise excess factor should be reduced in the layer (CuInSe2 (N)) where the electric field and the multiplication factor of the charge carriers are important. We have shown that the gap between the ionization coefficients of the carriers (electrons and holes), reduces the excess noise in the avalanche layer (carrier multiplication layer or space charge area). For a coefficients ionization ratio k=kp/kn=11, a low value of the noise excess factor of the order of 1.5 is obtained with a multiplication coefficient Mph=2.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type
AU  - Abdoul Aziz Correa
AU  - Mamadou Dia
AU  - El Hadji Mamadou Keita
AU  - Chamsdine Sow
AU  - Babacar Mbow
Y1  - 2020/08/04
PY  - 2020
N1  - https://doi.org/10.11648/j.jmpt.20200601.11
DO  - 10.11648/j.jmpt.20200601.11
T2  - Journal of Photonic Materials and Technology
JF  - Journal of Photonic Materials and Technology
JO  - Journal of Photonic Materials and Technology
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2469-8431
UR  - https://doi.org/10.11648/j.jmpt.20200601.11
AB  - The effects of impact ionization in the space charge zone on the multiplication factor of the carriers, the noise excess factor, and the multiplication voltage (avalanche voltage) are modeled for avalanche photodiodes (APD). Research has shown that photomultiplication of charge carriers and impact ionization allow to improve the quantum efficiency of avalanche photodiodes. However, these phenomena are not without effect on the background noise which tends to disturb the signal of these devices. The aim of this article is therefore to verify the effect of impact ionization on this noise characterized by an noise excess factor. Our work consists, at first, to establish the mathematical expressions linking the characteristic parameters of photomultiplication, impact ionization and noise before carring out simulations on photodiode model based on CuInSe2 (CIS) of the P+N type. In our photocurrent calculation models, we first worked in the absence of electronic ionization, then in the presence of electronic ionization. Our simulation results confirm that ionization by impact in the part of the multiplication layer far from the active surface (the junction) increases the noise excess factor. We were able to note that the effect of impact ionization places strict constraints on the doping level of the carrier multiplication layer in order to minimize noise. However, the noise excess factor should be reduced in the layer (CuInSe2 (N)) where the electric field and the multiplication factor of the charge carriers are important. We have shown that the gap between the ionization coefficients of the carriers (electrons and holes), reduces the excess noise in the avalanche layer (carrier multiplication layer or space charge area). For a coefficients ionization ratio k=kp/kn=11, a low value of the noise excess factor of the order of 1.5 is obtained with a multiplication coefficient Mph=2.
VL  - 6
IS  - 1
ER  -

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