Calculation a New Transmission Coefficient of Tunneling for an Arbitrary Potential Barrier and Application to Alpha Decay
Issue:
Volume 5, Issue 2, December 2019
Pages:
24-31
Received:
15 January 2019
Accepted:
18 February 2019
Published:
25 December 2019
Abstract: According to classical physics theories, a moving particle cannot move to an environment with greater potential energy than its total energy during movement. But according to quantum theories, this event is known to be. This event is called tunneling. Tunneling is a probability, and it is measured by a transition coefficient. Correct calculation of this coefficient is very important because very sensitive and important instruments have been developed based on this event, and many events in nature can be explained by tunneling. This coefficient is generally calculated by semi-classical approaches (WKB) and the known formula is an approximate formula. In this paper, the general transmission coefficient of a potential barrier with arbitrary form is calculated by a simple method without any approximation. The results are applied to calculate the half-life values of the nuclei that emit alpha particles. The half-life values obtained from our calculations and the classical method (WKB) have been compared, and it has been found that the new half-life values are exactly consistent with the experimental values.
Abstract: According to classical physics theories, a moving particle cannot move to an environment with greater potential energy than its total energy during movement. But according to quantum theories, this event is known to be. This event is called tunneling. Tunneling is a probability, and it is measured by a transition coefficient. Correct calculation of...
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Study of the Optical Properties of Isonitrosoacetophenone (C8H7NO2) Using UV-Vis Spectroscopy
Salma Fath Alrahman Ahmed,
Khalid Mohamed Haroun,
Adam Mohammed Adam Bakheet,
Yousif Hassan Alsheikh,
Abdalsakhi Suliman
Issue:
Volume 5, Issue 2, December 2019
Pages:
32-37
Received:
25 October 2019
Accepted:
16 December 2019
Published:
6 January 2020
Abstract: In this work, the optical properties (absorption, absorption coefficient, refractive index, band- gap energy, extension coefficient, and reflection) of the five samples of isonitrosoacetophenone (C8H7NO2) was studied using Uv-Vis spectroscopy. The C8H7NO2 was dissolved in different amounts of (0.5, 1, 1.5, and 2) ml of distilled water. The effect of concentration on the optical properties of C8H7NO2 was investigated experimentally and it was shown that the different values of the calculated optical properties are clearly affected by the concentrations of the C8H7NO2 compound. In addition, when the isonitrosoacetophenone is mixed with 2.0 ml of water the absorbance rate of the pure isonitrosoacetophenone was shown to be decreased from 2.7×10-4 (a. u.) at 278 nm to 1×10-4 (a. u.) at the same wavelength. Furthermore, the transmission of C8H7NO2 was shifted towards the shorter wavelength as the concentration of water is increased, which is starts from ~346 nm for pure isonitrosoacetophenone and decreased to ~ 300 nm when mixed with 2.0 ml of water. The important finding of this work was that the compound C8H7NO2 is opaque (non-transmittance) material from the wavelength of 220 to 300 nm which corresponds to the UV portion of the electromagnetic spectrum and this suggests more study in this area.
Abstract: In this work, the optical properties (absorption, absorption coefficient, refractive index, band- gap energy, extension coefficient, and reflection) of the five samples of isonitrosoacetophenone (C8H7NO2) was studied using Uv-Vis spectroscopy. The C8H7NO2 was dissolved in different amounts of (0.5, 1, 1.5, and 2) ml of distilled water. The effect o...
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Surface Characterisation of Spin Coated Quaternary Chalcogenide CZT(S, O) Thin Film for Optoelectronic Applications
Rafiu Adewale Busari,
Bidini Alade Taleatu,
Saheed Adekunle Adewinbi,
Olusegun Emanuel Adewumi,
Adeniyi Yisau Fasasi
Issue:
Volume 5, Issue 2, December 2019
Pages:
38-45
Received:
8 November 2019
Accepted:
4 December 2019
Published:
7 January 2020
Abstract: Thin films of copper zinc tin sulphide (CZTS) have been deposited on glass substrate at various solution concentration and angular speed using sol-gel spin coating technique. Surface morphology showed that the deposited layers are continuous and pinhole free. The film’s particles are evenly distributed and adhered firmly to the substrates. X-ray diffraction studies revealed that the films are polycrystalline with tetragonal kesterite structure. Interplanar spacing and average crystallite size were estimated as 3.732 Å and 56.53 nm. Film’s thickness and stoichiometry were determined from Rutherford Backscattering Spectroscopy (RBS) as127 nm and Cu1.5Zn1.0Sn1.1S4.4O3.3. Optical studies showed that the deposited films exhibit direct band transition. The values of the energy gap were found between 1.30 and 1.60 eV. The result of the study suggested that the deposited CZTS thin films can perform as a good absorber material in nanostructured optoelectronic devices.
Abstract: Thin films of copper zinc tin sulphide (CZTS) have been deposited on glass substrate at various solution concentration and angular speed using sol-gel spin coating technique. Surface morphology showed that the deposited layers are continuous and pinhole free. The film’s particles are evenly distributed and adhered firmly to the substrates. X-ray di...
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