Research Article
Design Window for SHJ Cells: Joint Impact of Base Thickness and Doping Under AM1.5G
Issue:
Volume 13, Issue 4, December 2025
Pages:
158-170
Received:
9 October 2025
Accepted:
17 October 2025
Published:
31 October 2025
Abstract: We numerically map the joint impact of base thickness (e) and donor density (ND) on silicon heterojunction (SHJ) cells under AM1.5G using SILVACO ATLAS (drift–diffusion with SRH/Auger and field/concentration dependent mobilities). Optics is treated by 2D specular ray tracing (no texturing), so results constitute a conservative baseline at small e. To isolate e and ND, the a Si:H/c Si interface is held fixed across parameter sweeps. We identify an absorption–collection trade off: Jsc increases from thin to moderate e and then saturates or declines; Voc decreases with increasing e and high ND due to enhanced recombination. The fill factor peaks at small e under low to moderate ND. Efficiency exhibits a robust optimum at moderate thickness (e.g., e ≈ 120-160μm) and intermediate ND, whereas heavy doping shifts the optimum but ultimately degrades Voc/FF via Auger (and, in extended models, band gap narrowing). From a design standpoint, we delineate a practical window that balances resistivity and recombination while avoiding heavy doping. Limitations: absence of light trapping and fixed interface, mean our absolute metrics are conservative, but trends and optima are robust. Planned extensions include Lambertian/textured optics, interface sweeps, and calibrated BGN/contact models to raise absolute values without altering the identified trade offs.
Abstract: We numerically map the joint impact of base thickness (e) and donor density (ND) on silicon heterojunction (SHJ) cells under AM1.5G using SILVACO ATLAS (drift–diffusion with SRH/Auger and field/concentration dependent mobilities). Optics is treated by 2D specular ray tracing (no texturing), so results constitute a conservative baseline at small e. ...
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Research Article
Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle
Issue:
Volume 13, Issue 4, December 2025
Pages:
171-178
Received:
14 October 2025
Accepted:
30 October 2025
Published:
8 December 2025
DOI:
10.11648/j.ajee.20251304.12
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Abstract: In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnetic field by analyzing the coupled effects of two critical parameters: the base thickness and the magnetic field inclination angle. The proposed model is founded on the one-dimensional, steady-state equations governing the generation, diffusion, and recombination of minority charge carriers, specifically aiming to determine the optimum base thickness and the most favorable field orientation. To achieve this objective, we developed a comprehensive analytical model that accurately describes the electrical behavior of a highly-doped N+/P+/N+ vertical-junction solar cell under steady-state operation. The model assumes vertical monochromatic photo-generation, lateral carrier collection, and a static magnetic field applied at a variable inclination angle (θ) relative to the x-axis. Through rigorous numerical simulations, the influence of the base thickness (Wp) and the magnetic field inclination angle (θ) on fundamental photovoltaic parameters namely the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the conversion efficiency (η) is systematically evaluated. This approach offers a pertinent strategy for developing highly efficient silicon solar cells designed for operational environments subject to significant electromagnetic perturbation. The findings demonstrate that the synergistic combination of a precisely engineered base thickness (approximately Wp=0.025cm) and an optimal magnetic field orientation (θ≈90°) is paramount for maximizing the performance of the silicon solar cells.
Abstract: In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnet...
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,
Aly Toure
